Home Aze Ru Eng

Maarif A. Jafarov

BSU, professor Department of semiconductor physics
D.  Chief research scientist
tel:+(994)125390693, e-mail:maarif.jafarov@mail.ru   

PERSONAL DATA

1960, Lachin, Azerbaijan

EDUCATION AND ACADEMIC DEGREES OBTAINED

From 1977 to 1982: student, Faculty of Physics, Baku State University
1982: M.Sc. (with highest honors), Faculty of Physics, Baku State University
From 1982 to 1986: postgraduate student, Institute of Photoelectronics, Azerbaijan National Academy of Sciences
1989: Ph.D., “Semiconductor physics”, Institute of Photoelectronics, Azerbaijan National Academy of Sciences, Baku
2007:D  Eloectronic prosseses in single crystals of any A2 B6 type compounds and in films on their basis, chemically deposited from solution

COMPLETE PROFESSIONAL BACKGROUND

From 11.2005 to present: Chief research scientist, Institute for Physical Problems, Baku State University, Baku
From 01.1994 to 11.2005: Head of the Solid State Electronics Lab., Baku State University
From 09.1982 to 01.1994: Senior research scientist, Institute of Photoelectronics, Azerbaijan National Academy of Sciences, Baku
130 scientific work, 60 scientific article, 6 patent
1. 2001: Nasirov Elshan, “Physical Electronics”, Baku State University
2. 1998: Nasibov Ilgar, “Physical Electronics” Institute of Photoelectronics, Azerbaijan National Academy of Sciences
Ыегвн ща electronic properties шт з-ензу СвЫ films, p- type characteristics of Cu- doped CdS  ыштпду скныефды, еffect of heat treatment on electrical and electrophysical properties of the р-CdS films and poliскныефды.
In the sandwich structure of Al-CdS films at presence of intermediate Al2O3 layer is observed effect of switching as steady conditions of conductivity, which in some approach can be considered as prebreakdown and after breakdown conditions. The results of researches of the current carrying mechanism in structure Al-CdS, made by a method of deposition from a water solution on a hot substrate are given. It is established, that presence of the nanosize inverse layer of р-type СdS with high concentration of holes, controlled by technological conditions of film deposition, causes the formation of reverse-biased p-n transition, in parallel Аl-n-СdS barrier.
Have been investigated the negatron phenomenon in thin films Cd1-хZnхS, Cd1-хZnхSе and CdS1-хSeх. Various negatron phenomena, including, nonlinear current-voltage characteristics such as negative differential resistance, negative photoconductivity, negative differential photoconductivity and the negative photocapactor effect, found out in films      Cd1-хZnхS, Cd1-хZnхSе and CdS1-хSeх depending on technological modes of deposition, anion and kation replacements and under condition of interaction with an atmosphere, explains by the uniform electronic-molecular mechanism. Negative photoconductivity is a function of the sizes of intercrystalline barriers and nanocrystallites. Negative differential photoconductivity is caused with formation of nanosize electrical domains, and the negative photocapacity – with change of a charging condition of the nanoclusters.
The investigation of electronic properties of А2В6 type solid solution films has gained the special urgency. It, first of all, is bound to a unique opportunity of making on their basis of a series of essence new devices of a solid-state electronics with a broad spectrum of photoelectric properties due to variation of a composition and structural perfection. The results of investigations of mechanisms of photochemical reactions detected in Cd1-хZnхS, Cd1-хZnхSе and CdS1-хSeх films, obtained by a method of chemical deposition from water solution on sitall, glass, quartz and aluminium substrates depending on technological mode of deposition and heat treatment are given. In a broad range of a temperature variation, wave length and the light intensities are investigated their photoelectric properties, peculiar latent photoelectric memory and photochemical reaction. Wide-band films Cd1-хZnхS, Cd1-хZnхSе and CdS1-хSeх possess the high photosensitivity and are perspective materials for creation of sources and receivers of a radiation in the visible and infrared spectral regions. Present work devotes to results of investigations of some electrical properties of Ni- Cd1-хZnхS, Ag- CdS1-xSex Al- Al2O3- Cd1-хZnхSe barriers.
Investigations of some electrical and photoelectrical properties of Cu2S-Cd1-xZnxS, Cu2Se-Cd1-xZnxSe, Cd1-xZnxS-CdS1-xSex, Cd0.4Zn0.6S/CdSе0.5Тe0,5. heterojunctions, manufactured by a method of chemical deposition from water solution are given. Ternary Cd1-xZnxS, Cd1-xZnxSe and CdS1-хSeх is considered to be a promising  materials for solar cell  applications because of its high optical absorption coefficient, as well as its versatile optical and electrical properties which can, in principle, be purposefully controlled by variation of its composition, heart-treatment temperature and time. As is known, thin film solar cell technology offers the best hope for obtaining photovoltaic devices with low cost and reasonable efficiency. One of the fabrication methods for preparing such thin

PRESENT RESEARCH INTERESTS

Electronic properties of А2В6 type solid solution films, Heterojunctions of А2В6 type solid solution films for solar cell, negatron phenomenon, nanocrystallites, Electrochemical deposition, Nanotechnology.

INTERNATIONAL CONFERENCES, SYMPOSIUMS

2014, Thessaloniki, Greece, 11th International Conference  on Nanosciences & Nanotechnologies–NN14
2013, France, PVTC, Thin Films.Advanced Silicon Solution, 21-23 may
2013,  Saint Petersburg, Mathematical challenge of quantum transport in nanosystems  International Conference, March 12 – 15,
2013, SPIE Optics+Photonics  NanoScience  NanoEngineering Conference 8818 · Functional Nanostructured Thin Films
2013, Tenerife, Spain,  The Twenty-first Annual International Conference on  composites/nano engineering (ICCE-21)  July 21-27,
2013, Istanbul, Turkey, The 9th International Conference on “Technical and Physical Problems of Electrical Engineering” (ICTPE-2013), Isik University & Istanbul Technical University, 9-11 September 2013
2013, Thessaloniki, Greece, 10th International Conference  on Nanosciences & Nanotechnologies–NN13
2012, Edinburgh,The 24th Conference of the EPS Condensed Matter Division (CMD-24), 3 - 7 September
2012, France,Photovoltaic technical conference – thin film & advanced silicon solutions
2012, Hong-Kong,  International Conference on Power and Energy SystemsLecture Notes in Information Technology
2012, Kyiv, Ukraine ELNANO’ 2012, April 10-12,
2012, Warsaw, Poland,  E-MRS Fall Meetings on September 17-21,
2012 San Diego, California, USA SPIE-Optic+Photonic 2012, Thin Film Solar Technology 12 - 16 August
2012, Technical and Physical Problems of Power Engineering, İCTRE-2012,
2012, Chisinau, Moldova, 6th Interntional Conference on Materials Science and Condensed Matter Physics (MSCMP 2012)
2012, Alushta, Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference,
2012, Zvenigorod,   Russia. The International Conference “Micro- and Nanoelectronics – 2012” (ICMNE-2012) with the Extended Session "Quantum Informatics" (QI-2012) and the Workshop "Silicon-on-Insulator" October 1-5,
2011,  Strasbourg, France, EMRS –  Engineering of wide bandgap semiconductor materials for energy saving, 09 May
2011, Strasbourg, France, EMRS –  Advanced inorganic materials and concepts for photovoltaics. 12 May
2011, Tbilisi, Georgia International Scientific Conference Philosophy and Synergy of Information,
2009, Ulyanovsk, Russia; X International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems
2008, Ulyanovsk, Russia; X International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems
2007, Ulyanovsk, Russia; IX International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems
2006, Ulyanovsk, Russia; VIII International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems.
2006, Moscow, Russia; XIX International Science-Technical Conference on Photoeleсtronics and night vision devices.
2006, Strasbourg, Thin film and nanostructured materials for photovoltaics. E-MRS Spring Meeting.
2006, Ankara, Turkey; Third International Conference on Technical and Physical Problems in Power Engineering
2005, Strasbourg, France; E-MRS Spring Meeting, Thin film and nanostructured materials for photovoltaics
2004, Ulyanovsk, Russia; VI International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems.
2004, Moscow, Russia; XVIII International Science-Technical Conference on Photoelectronics and night vision devices.
2004, Taganrog, Russia; The actual problems of the sold-state electronics and microelectronics
2004, Baku, Light in nanosize solide. 1 International Scientific Seminar,
2003, Strasbourg, France; E-MRS Spring Meeting, Thin film and nanostructured materials for photovoltaics
2002, Edinburgh, UK; 26th International Conference on the Physics of Semiconductors
2002, Baku, Azerbaijan; First International Conference on Technical and Physical Problems in Power Engineering
2002, Moscow, Russia; XVII International Science-Technical Conference on the Photoelectronics and night vision devices.
2002, Taganrog, Russia; The actual problems of the sold-state electronics and microelectronics
2000, Santa Barbara, USA; Second International Conference on Inorganic Materials
2000, Moscow, Russia; XVI International Science-Technical Conference on Photoelectronics and night vision devices
1999, Chernovts,Ukraine, Physical problems in material science of semiconductors.
1999, Baku, Azerbaijan, Second International symposium on Mathematical computational applications.
1.1997 Chernivitsi,  Physical problems in material science of semiconductors .
1997, Ulyanovsk, Russia; International Conference on the deep level centers in semiconductors
1994, Taiwan, Seventh International Conference on solid films and surfaces.
1991, Ashkabad, Turkmenistan; The Conference on Photoelectrical phenomena in semiconductors
1990, Kaluga, Russia; V-International Conference on physical processes in the semiconductor heterojunctions

LIST OF SELECTED PUBLICATIONS

M.A. Jafarov, E.F. Nasirov, S.A. Mamedova Neqative photoconductivity in thin films of AIIBVI solid solutions
Физика и техника полупроводников, 2014, том 48, вып. 5, с.590-596
М.А.Джафаров,  С.А.Мамедова, Р.Ф.Мехтиев  Негатронные эффекты в пленках CdSe1-xTex и ZnS1-xSex Поверхность. Рентгеновские, синхронотронные и нейтронные исследования, 2014, № 2, с.1-7
М.А.Джафаров, С.А.Мамедова, Р.Ф.Мехтиев Фотопроводимость пленок твердых растворов на основе АIIBVI, осажденных из раствора Неорганические Материалы, 2013, том 49, № 11, с. 1168-1172
M.A.Jafarov, E.F.Nasirov. Preparation of Nanosized A2B6 Compound Multilayer Structures for Solar Cells. Universal Journal of Physics and Application 1(2): 125-129, 2013
M.A.Jafarov, E. F. Nasirov Nanoscale Structures based on the Zn1-xCdxS. Nanosystems: physics, chemistry, mathematics, 2013, 4 (5), P. 680-689
M.A.Jafarov, E. F.Nasirov Peculiarities of ZnCdSe Nanolayers by Chemical Deposition. Journal of Chemistry and Chemical Engineering, 7(2013) 402-408
М.А.Джафаров, С.А.Джахангирова Е.А.Ханмамедова Photochemical reaction in А2В6 films, deposited from water solution.   Учебный эксперимент в образовании Научно-методический журнал , 2 (2013), с.65-73.
M.A. Jafarov, E.F. Nasirov, S.A. Jahangirova, E.A. Khanmammadova, Photochemical reaction in А2В6 films, deposited from water solution, Condenced matter and interphases, V. 15, N. 3, 2013. pp. 260-265,
М.А. Джафаров, Э.Ф.Насиров Наноструктурированные материалы на основе сульфида кадмия. Наносистемы: физика, химия, математика, 2012, 3 (6), С. 91–97
М.А. Джафаров, Э.Ф.Насиров Properties of the thin-film solar cells with heterojunctions Cu2S- Cd1-xZnxS and Cu2Se-            Cd1-xZnxSe. Proceeding of SPIE 8470, Thin Film Solar Technology IV, 84700l
М.А.Джафаров, Э.Ф.Насиров Создание и физические свойства гетеропереходов p-CdTe/n-ZnCdSe. Альтернативная энергия и экология, No 10, Москва, 2012, с. 45 –  49.
M.A.Jafarov, E.F.Nasirov Solar Energy Conversion by Cells using CdZnS and CdTe Films.  Lecture Notes in İnformation Technology. V 13, pp 76-79
М.А.Джафаров, Э.Ф.Насиров, Р.Ф.Мехтиев, С.А.Мамедова , Исследование особенности роста и электрофизических свойств пленок теллурида и сульфида кадмия.  Bakı Universitetinin xəbərləri, Bakı, 2011,  №3, s.
М.А.Джафаров, Э.Ф.Насиров, Р.Ф.Мехтиев, С.А.Мамедова Фотохимическая реакция в наноразмерных пленках твердых   растворов А2В6, осажденных из раствора. Bakı Universitetinin xəbərləri, №1, 2010, s.142-150
М.А.Джафаров, Э.Н.Заманова Фотоэлектрические свойства пленок сульфоселенида цинка, осажденных из раствора. FİZİKA, 2009 CİLD XV, №2, s.189-191
М.А.Джафаров, Э.Н.Заманова, Фотоэлектрические свойства пленок сульфоселенида цинка, осажденных из раствора, Fizika, 2009, CİLD XV №2, s.189-191
М.А.Джафаров,  Э.Н.Заманова,  Магниточувствительные диоды на основе электросинтезированных плёнок CuSmS2 Fизика, Бакы, 2008, C.XIV, №3, s.38-40
A.S.Abdinov, M.A.Jafarov, S.M.Mamedova, E.F.Nasirov, Functionalities of the CdSe1-xTex films, deposited from a water solution, in IR region of a spectrum, Applied Physics (Russia) v.3, с.94-97, 2008,A.S.Abdinov, M.A.Jafarov, S.M.Mamedova, Photoelectrical properties of the CdZnS thin films, deposited from solution. Inorganic Materials, 2007, v.43, №.3. p.311-313.
M.A.Jafarov, Е.N.Zamanova, H.M.Mamedov Effect of heat treatment on electrical and electrophysi-cal properties of the CdS Semiconductor physics and Technology. p.1234-1239, 1999.
M.A.Jafarov About the mechanism conductivity in this films diode structures based on the bases of CdZnS Journal of Physics, Condensed Matter, p. 984-986, 1999.
M.A.Jafarov, H.M.Mamedov Recombination processes in CdZnS Recombination processes in CdZnS Journal of Physics, Condensed Matter,  p. 984-986, 1999.
M.A.Jafarov Photoelectrical properties of the CdZnS thin films, deposited from solution Inorganic materials, v.35, N.11, p.1307-1312, 1999.
M.A.Jafarov Spectral memory in CdZnS thin films Inorganic materials, v.35, N 3, p.300-302, 1999.
M.A.Jafarov Negative photoconduction in the CdZnS thin films Inorganic materials, v.34, N9, p.1034-1036, 1999.
E.Zamanova, M.A.Jafarov IR optical filter based on the copper doped CdS single crystals Instrument and experimental techniques, v.38, N 1, p.84-85, 1995.
E.Zamanova, M.A.Jafarov Effect of photomemory in high-resistance CdS:Cu single crystals Physics and techniques of semiconductors, (Russia) v.29, N8, p.1411-1413, 1995.
M.A.Jafarov Effect of switching in single crystals (In2Te3) и (FeTe) Inorganic materials, v.32, N1, p.34-35, 1996.
A.S.Abdinov, M.A.Jafarov, R.M.Rzayev The effect of doping by Dy on photoelectrical properties of GaSe Inorganic materials, v.35, N4, p.410-412, 1999.
A.S.Abdinov, M.A.Jafarov, R.M.Rzayev Intrinsic defects and Dy impurities in GaSe Inorganic materials, v.34, N3, p.271-273, 1996.
A.S.Abdinov, M.A.Jafarov, H.M.Mamedov, E.F.Nasirov Photoconductivity Cd1-xZnxS films, deposited from a water solution Proc. SPIE, v. 4467, p. 186-194, 2003 and Applied Physics (Russia) v.3, с.94-97, 2004.
A.S.Abdinov, M.A.Jafarov, H.M.Mamedov, E.F.Nasirov Functionalities of the Cd1-xZnxSe films, deposited from a water solution, in IR region of a spectrum Proc. SPIE, v. 4467, p. 202-205, 2003 and Applied Physics (Russia) v.4, p.84-89, 2004.
Jafarov M.A. Photoconductivity Cd1-xZnxS films, deposited from a water solution Second International Conf. on Technical and Physical Problems in Power Engineering. Tabriz, Iran, p.408-410, 2004.
M.A.Jafarov Photoreceivers of JR radiation on the bases of CdSe:Cu films deposited from solutions Proc. of SPIE, v.4340, p.121-124, 2000 and Applied Physics (Russia) v.6, p.68-73, 2000.
A.S.Abdinov, M.A.Jafarov, N.M.Mekhtiev Photosensitivity of the CdSSe films near the JR region Proc. of SPIE, v.4340, p.107-111, 2000 and Applied Physics (Russia) v.6, p.63-67, 2000.
A.S.Abdinov, M.A.Jafarov, E.F.Nasirov Photoconductivity of CdZnSe films in IR region deposited from solution Proc. of SPIE, v.4340, p.112-116. and Applied Physics (Russian) v.6, p.56-62, 2000.
Abdinov A.Sh., Jafarov M.A., Nasirov E.F., Mammadova S.A. Solar Cells on the base of Cd1-xZnxS/CdSе1-xТex heterojunctions. Internaтional Conf. on Technical and Physical Problems in Power Enginering. ТРЕ-2006, Ankara, Turkey.
E.K.Guseynov, M.A.Jafarov, I.Nasibov Noise characteristic of CdZnS films Turkish journal of Physics, v.21, N12, p.1255-1261, 1997.
E.K.Guseynov, M.A.Jafarov, I.Nasibov Characteristics of CdS:Cu photosensitive films Turkish journal of Physics, v.21, N2, p.206-211, 1997.

BOOKS

А.Г.Кязым-заде, В.М.Салманов, М.А.Джафаров, А.Г.Гусейнов, Р.М.Мамедов. Практикум по физике полупроводников. İSBN 978-9952-435-31-03, Баку-2013,433с (dərs vəsaiti).
A.H.Kazımzadə, V.M.Salmanov, A.Z.Abbasova, M.Ə.Cəfərov, Ə.H.Hüseynov, L.H.Həsənova, R.M.Məmmədov. Yarımkeçiricilər fizikası üzrə praktikum. İSBN 978-9952-435-31-03,  Bakı-2013,403с (dərs vəsaiti).
A.H.Kazımzadə, V.M.Salmanov, M.Ə.Cəfərov, Ə.H.Hüseynov, L.H.Həsənova, R.M.Məmmədov. Yarımkeçiricilər fizikasından məsələlər. İSBN 978-9952-435-38-2,  Bakı-2014,403с (dərs vəsaiti)
M.A.Jafarov, E. F. Nasirov Электронные свойства наноструктированных материалов соединений А2В6. Монография,  LAMBERT Academic Publishing, Германия, 183 стр, 2013

Bookmark and Share