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AHMED SHAHVELED ABDINOV

Surname and first name:                Abdinov Ahmed Shahveled oglu

Scientific degree and                       Doctor of physics and mathematics of

present position at BSU:                  sciences, Head of Physical Electronics Department

Phone (work):                                           99412-439-73-73

E-mail:                                          Abdinov-axmed@yandex.ru Abdinov_axmed@yahoo.com

SHORT BIOGRAPHY

Date /Place of birt:                        30 May 1945, Ordubad, Azerbaijan

Sex:                                         Male

Marital status:                   Married

Nationality:                                 Azerbaijani

Full address of  Institution:            Baku State University, Z.Khalilov                                                                                               st.23,AZ 1148 Baku, Azerbaijan

EDUCATION AND SCIENTIFIC DEGREE AND STATUS

1968       M.S. (with honor diploma), Faculty of Physics, Baku State University, (Baku, Azerbaijan). On the results in education was awarded a scholarship "Lenin"

1971      Post graduate study in USSR (now Russian Federation) Physical-Technical Institute of the Academy of Sciences (St. Petersburg).

1972      Candidate of physical and mathematical sciences

Nature of minority heated carriers in semiconductors of germanium

1979      Assistant professor

1979      Doctor of physical and mathematical sciences

Electronic processes in А3B6 type heterogeneous layered semiconductors

1981      professor, Baku State University

LABOR ACTIVITY

1963-1968     Student of Physical Faculty of the Baku State University, (Baku, Azerbaijan)

1968-1969      Azerbaijan National Academy of Sciences, Institute of Physics, junior research assistant, (Baku, Azerbaijan)

1969-1972     Postgraduate student (dissertate), Specialist in Physical Electronics, Ioffe Physical and Technical Institute, (Sankt- Petersburg, Russian Federation)

1972-1975     Assistant, Faculty of Physics, Baku State University, (Baku, Azerbaijan)

1975-1979     Junior teacher, Faculty of Physics, Baku State University, (Baku, Azerbaijan)

1979-1981     assistant professor, Faculty of Physics, Baku State University, (Baku, Azerbaijan)

1981-1988     professor, Faculty of Physics, Baku State University, (Baku, Azerbaijan)

1988-1989     Dean of Physics Faculty, Baku State University, (Baku, Azerbaijan)

1989-1992     Professor of Faculty of Physics, Junior Scientific and Advisor of scientific laboratory of “Solid State Electronics”, Baku State University, (Baku, Azerbaijan)

1992-1993     Head of Physical Electronics Department, professor, Baku State University, (Baku, Azerbaijan); Advisor of scientific laboratory of “Solid State Electronics”

1993-2000     Vice-minister of Ministry of Education, (Baku, Azerbaijan); Head of Physical Electronics Department

from 2000       Head of Physical Electronics Department, Baku State University, (Baku,

to present      Azerbaijan)

 

REAL SCIENCE TEACHING INTERESTS

General physics

Solid state electronics

Optoelectronics

Optoelectronics device, equipment, and systems

 

SCIENTIFIC ACTIVITY

Author of more than 315 scientific work

Author of 5 books (Textbook and manuals)

Author of 2 patents (invention)

Scientific work with young frames

Master's degree– 15

Candidate of physical and mathematical of sciences – 30

Doctors of physical and mathematical of sciences – 6

PRESENT RESEARCH INTERESTS

Study of peculiarity of electronic processes in partially disordered crystals and thin films, also structures on their basis and explanation of mechanisms of influence material disordered on these processes.

 

government prize and honorary titles

1976                   Komsomol laureate in the scientific and techniques areas

1993                   International Sorose Fund laureate in the scientific area

INTERNATIONAL SEMINARS, SCHOOLS,  CONFERENCES

1971, 1975, 1977, 1981, 1989    International Symposium on “unstableness and plasma in solid states” (Litva, Vilnius),

1973                                       International Scientific Symposium on “Electroluminescence and its application” (Russian Federation, Stavropoulos),

1973                                       International Scientific Conference “Problems of dielectrically electronics” (Uzbekistan,  Tashkent),

2000, 2002, 2004, 2006              International Conference on actual problems of Solid State Electronics and Microelectronics (Russian Federation,  Taganrog),

2004, 2006                              International Conference on Opto-, nanoelectronics, nanotechnology and microsystems (Russian Federation, Ulyanovsk),

2000, 2002, 2004, 2006, 2008         International Conference on Photoelectronics and Night Vision

2010, 2012                              Devices (Russian Federation, Moscow),

2002, 2004, 2006, 2010              International Conference on Technical and Physical problems of Energetic (Azerbaijan-Baku, İran-Tabriz, Turkey-Ankara),

2005                                       International Conference “Physics-2005” (Azerbaijan-Baku),

2004, 2005, 2006, 2007              European Materials Research Society, Spring Meeting (France,

2008, 2009, 2010, 2011                  Strasburg),

2007                                       International Conference on Electronic and phonon processes in semiconductors (Azerbaijan-Baku).

2008                                       International Scientific Conference on "Actual Problems of Physics V" (Azerbaijan, Baku)

2009                                       International Scientific Conference dedicated to the 90th anniversary of Baku State University (Baku, Azerbaijan)

2010                                       International Scientific Conference of the European Materials Society (Poland, Warsaw)

Scientific direction

Electronic processes in partially- unordered crystals, films and contact structures on their basis

Publication

In the period of 1971-2000 is published more 315 scientific works in journals:

Semiconductors (Russian Federation), Optics and Spectroscopy (Russian Federation), Microelectronics (Russian Federation), Applied Physics (Russian Federation), Inorganic Materials (Russian Federation), High-temperature compounds (Russian Federation), Journal of Physical Chemistry (Russian Federation), «Physics Status Solidi» (Germany),   «Thin Solid films»  (UK), “Journal of Optoelectronics And Advanced Materials” (Rumın), Proc. SPİE (USA), Japan Journal of Applied Physics (Japan), transactions of NAS of Azerbaijan (Azerbaijan),  Proceedings of NAS of Azerbaijan (Azerbaijan), Journal of Physics  (Azerbaijan), bulletin of Baku State University  (Azerbaijan).

SELECTED WORKS PUBLISHED IN THE LAST 10 YEARS

  1. Electrical properties of izotypic heterojunctions n-InSe<RE>/n-CuInSe2. Problems of power, 2004. № 2, p.37-44.
  2. Solar converters on the basis of isotypic heterojunctions In2O3/Cd1-xZnxSe/CdSeS manufactured by the method of electrochemical deposition. Problems of power, 2004, № 1, p.64-70
  3. Peculiarity of volt-ampere characteristics in single crystals of InSe doped by rare-earth elements. Transactions of NASA, 2004, Vol. XXIV, p.75-80
  4. Photoluminescence of single crystals InSe and GaSe, doped by rare-earth elements. Inorganic materials,  2004, Vol.40, № 6, p.660-662
  5. About the mechanism of doping by rare-earth elements on photoluminescence of single crystals of А3В6 with layered structure. Russian J. of Applied Physics, 2004, №5. p.74-78
  6. Sensitization of IR photoconductivity in layered crystals of InSe by electrical field. Russian J. of Applied Physics, 2004, № 5, p.81-85.
  7. Negative infrared photoconductivity in films CdS1-xSex.  Russian J. Of Applied Physics, 2004, № 3, p.94-97
  8. Functionality of films Cd1-xZnxSe in IR region of spectrum, deposited from solution. Russian J. Of Applied Physics, 2004, № 4, p.84-89.
  9. Peculiarity of electrical instability in single crystals of InSe doped by rare-earth elements. Transactions of NASA, 2005, Vol.25, № 5, p.73-77
  10. Transactions of NASA, 2005, Vol. 25, № 2, p.88-92.
  11. Effect of doping by RE on the switching phenomenon in layered crystals of А3В6. Transactions of NASA, 2005. Vol.25, № 4, p.29-35.
  12. Photosensitivity of p-Si/Cd1-xZnxS  heterojunctions manufactured by a method of electrochemical deposition. Thin Solid Films. 2005. V.48, pp.388-391.
  13. Relaxation of photoconductivity of the chemically deposited films CdSeТе. Transactions of NASA, 2006, № 2, Vol.XXVI, p.95-98.
  14. Sensitization photoconductivity in single crystals of p-GaSe, doped by rare-earth elements. News of Baku University, 2006, №3, p.151-156.
  15. Photoconductivity of effective material of p-GaSe, doped by rare-earth elements for solar energetics and optoelectronics. Problems of power, 2006, №3-4, p.39-44.
  16. Electroluminescence of single crystals p-GaSe<Dy>. J. Of Physics of NASA, 2006, № 3, p.8-11.
  17. Effect of doping by RE on the electrical properties of single crystals InSe. Inorganic materials, 2006, Vol.42, № 9, p.1035-1039.
  18. 2006, v.511-512, p.140-142
  19. On the opportunity of increase of stability degree of parameters and characteristics of IR photoreceivers on the basis of Mo/CdS1-xSex, Russian J. of Applied Physics, 2006, № 5, p.82-86.
  20. Electrical and Photoelectric Properties of Electrochemically Fabricated SnO2/Cd0.4Zn0.6S/CdTe Solar Cells, Physics of Semiconductor Devices, 2006, Vol.40, №.12, p.1476-1478.
  21. Russian J. of Applied Physics, 2006, № 2, p.62-66.
  22. Peculiarity of static VAC of single crystals GaSe doped by rare-earth elements. Transactions of NASA, 2006, Vol. ЛХЫЫ. №5-6. с.55-62
  23. Electrical and luminescence instabilities in monoselenides of А3В6 with layered structure, doped by rare-earth elements. J. of Physics of NASA,  2007, Vol.13, №4, p.136-139.
  24. Heat treatment effects in In2O3/Cd0.4Zn0.6S0.9Se0.1/CdTe  heterojunction solar cells. Journal of Optoelectronics and Advanced Materials, 2007, v.1, № 9, р.480-483
  25. Investiqation of electrodeposited glass/SnO2/CuInSe2/Cd1-xZnxS1-ySey/ZnO thin solar cells. Japanese journal of Applied Physics, 2007, v.46, № 11, p.7359-7361
  26. Photoelectrical properties of isotypic heterostructures n-InSe<Dy>/n-CuInSe2 in visible and near IR regions of spectrum. Russian J. of Apple Physics, 2007, № 1, p.107-110.
  27. Recombination processes in films CdSeTe, deposited from solution. Inorganic Materials, 2007, Vol.43, № 3, p.281-283.
  28. Switching phenomenon in CdZnSSe thin films, Azerbaijan Journal of Pysics , 2008 , XIV, № 3 , p107 - 108
  29. Eelectrical conductivity of  RE doped and pure GaSe crystals, Inorganic Materials , 2009, v 45 , № 7, p785 - 789
  30. Electroluminescence properties of AIIIBVI compound crystals doped by lanthanides, News of Baku University , 2010, № 1 , p.121 - 130
  31. Effect of light on the free carriers in the GaSe monoselenides, Azerbaijan Journal Pysics, 2011, № 2 , p51 - 57
  32. Electric field dependence of the free carrier mobility gallium selenide crystals, Semiconductors, 2012 , v. 46, p 751 - 755
  33. Effect of electric field on the intrinsic photoconductivity kinetics of InSe, Inorganic Materials, 2012, v 48, N 8 , p.892 - 896 .
  34. Effect of temperature and doping by RE elements on the carrier mobility in indium monoselenides, Semiconductors, 2013 , v 47, N 6 , p 751 - 755
  35. Effect of Electric field on the conductivity of InSe and InSe(Dy) crystals, Inorganic Materials, 2012 , v48 , N 8 , p.892 - 896 .
  36. Effect of temperature and doping by RE elements on the carrier mobility in indium monoselenides, Semiconductors, 2013 , v 47, N 8 , p 1009 - 1013
  37. Effect of electric field on conductivity of  InSe and InSe(Dy) crystals, Inorganic Materials, 2013 , v49 , № 12 , p1277 - 1284
  38. On the issue of intrinsic photoconductivity properties of gallium monoselenide crystals, Journal of Caucasus University, Physics, 2013 , v.1 , issue 1 , p.16 - 27 .
  39. Effect of temperature and rare earth elements doping on the electrophysical parameters of AIIIBVI crystals with layered structure, Azerbaijan Journal Pysics, 2013 , N 1 , p.17 - 27

Publication IN SI

1. Interaction of tallium impurity with oxygen in selen. Journal of Physical chemistry, 1968, Vol.XLII, №7, p.1680-1683.

  1. Peculiarity of change of mobility of the current carriers in Ge in high electrical field. Physics and technics of semiconductors, 1971, Vol.5, №8, p.1563-1567.
  2. Investigated carrier heating in Ge at high electron-hole interactions. Physics and technics of semiconductors, 1971, Vol.5, №10, p.1969-1975.
  3. Thermophotoelectrical phenomenon of carrier heating in germanium. Physics and technics of semiconductors, 1972, Vol.6, № 2, p.353-359,
  4. Effect of basic carriers on the mobility of germanium in pulse electrical field. Physics and technics of semiconductors, 1972, Vol. 6, №3, p.447-481.
  5. Change of minority hole mobility in germanium at high frequency electrical field at high electron-hole interactions. Physics and technics of semiconductors, 1972, Vol. 6, №3, p.577-578.
  6. Appearance of thermo-emf at homogeneous semiconductors (phenomenon of Benedix) at heating of carries by HF field in germanium. Physics and technics of semiconductors, 1972, Vol. 6, №5, p.915-920.
  7. Benediks effect at annealing of carriers by HF field, Physics and technics of semiconductors, 1972, Vol.6, № 7, p.1354-1358.
  8. S-elements based GaSe-type laminar semiconductors. Phys.Stat.Solidi (a), 1973, vol. 15, K.33-35.
  9. Change of electroconductance of p-GaSe at high HF electrical field. Physics and technics of semiconductors, 1973, Vol.7, №9, p.1830-1833.
  10. About the switching phenomenon in GaSe. Physics and technics of semiconductors, 1973, Vol.7, №10, с.2030-2031.
  11. Thermoemf connected with heating of carriers by HF field in p-GaSe. Physics and technics of semiconductors, 1974, Vol.8, №5, p.869-873.
  12. Hot carriers appeared at HF electrical field in electronic gallium selenide. Physics and technics of semiconductors, 1974, Vol. 8, p.192-195.
  13. The switching phenomenon in InSe. Physics and technics of semiconductors, 1974, Vol. 8,  № 11, p.2283.
  14. Thermoemf connected with heating of carriers by HF field in semiconductive compounds InSe. Physics and technics of semiconductors, 1974, Vol. 8, №12, p.2311-2315.
  15. About the mechanism of switching phenomenon in layered semiconductors of А3В6. Microelectronics, 1975, Vol. 4, №5, p.465-467.
  16. Investigated hot carriers appeared at HF electrical field in semiconductors n-InSe. Physics and technics of semiconductors, 1975, Vol. 9,  №8, p.1561-1564.
  17. Electroluminescence of single crystals of indium selenide. Optics and spectroscopy, 1975, Vol.38, №5, с.952-955..
  18. Electroluminescence switchers on the basis of layered semiconductors GaS. Physics and technics of semiconductors, 1975, Vol.9, №5, p.980-982.
  19. Injection of electrons and electron levels of capture in high-ohmic single crystals of gallium sulphide. Physics and technics of semiconductors, 1975, Vol.9, №7, p.1429-1431.
  20. Photo- and electrical memory phenomenon in high-ohmic monocrystals n-InSe. Physics and technics of semiconductors, 1975, Vol.9, № 9, p.1690-1693.
  21. Physics and technics of semiconductors, 1975, Vol.9, №10, p. 1970-1975.
  22. Photoelectrical memory phenomenon in p-GaSe. Physics and technics of semiconductors, 1975, Vol. 9, №11, p.2135-2138.
  23. Negative residue photoconductivity in monocrystals InSe.Physics and technics of semiconductors, 1975, Vol.9, №12, p.2382-2384.
  24. Investigation of volt-ampere characteristics of layered semiconductors n-InSe. Physics and technics of semiconductors, 1976, Vol.10,  №1, p.76-80.
  25. Negative photoconductivity and quenching of photocurrent in InSe at impurity excitation. Physics and technics of semiconductors,1976, Vol.10, №1, p.81-84.
  26. Effect of electrical field on the anomaly photoconductivity in monocrystals n-InSe. Physics and technics of semiconductors, 1976, Vol.10, №5, p.980-981.
  27. Physics and technics of semiconductors, 1976, Vol.10, №7, p.1369-1373.
  28. Generation of electrical pulses by monocrystals of gallium selenide. Physics and technics of semiconductors, 1976, Vol.10, № 10, p.1973-1975.
  29. Conductance of high ohmic monocrystals р-GaSe, stimulated by electrical field. Physics and technics of semiconductors, 1976, Vol.10, №13, p.2299-2303.
  30. Heating of curries at HF electrical field in heart treated monocrystals Ge1-xSix. Physics and technics of semiconductors, 1977, Vol.11,  №1, p.65-68.
  31. Hot electrons, produced by HF electrical field in n-Ge1-xSix. Physics and technics of semiconductors, 1977, Vol.11, №5, p.1005.
  32. Thermophotoemf connected with carrier heating in monocrystals of Ge1-xSix. Physics and technics of semiconductors, 1977, Vol. 11, №5, p.1006.
  33. Heating of carriers by HF electrical field in monocrystals p-Ge-Si. Physics and technics of semiconductors, 1977, Vol.11, №5, p.1006.
  34. About the anomaly photoconductivity in monocrystals n-InSe. Physics and technics of semiconductors, 1977, Vol.11, №2, p.393-396.
  35. Oscillation of current induced by impurity IR light in monocrystals indium selenide. Physics and technics of semiconductors,1977, Vol.11, №5, p.899-903.
  36. About the low-frequency oscillation of current in monocrystals InSe. Physics and technics of semiconductors, 1977, Vol.11, №10, p.2026-2029.
  37. Negative photoconductivity induced by electrical field in monocrystals GaSe. Physics and technics of semiconductors,1978, Vol.12, №6, p.1074-1079.
  38. About the electroluminescence in monocrystals GaS. Physics and technics of semiconductors, 1978, Vol.12, №6, p.1237.
  39. IR quenching of residual photoconductivity in monocrystals InSe. Physics and technics of semiconductors, 1978, Vol.12, №6, p.1237.
  40. Negative residual photoconductivity in monocrystals p-GaSe. Physics and technics of semiconductors, 1978, Vol.12,  №9, p.1759-1766.
  41. Impurity photoconductivity in GaSe, induced by intrinsic light. Physics and technics of semiconductors, 1980, Vol.14, №1, p.164-168.
  42. Phototriggere phenomenon in monocrystals of gallium and indium selenides. Physics and technics of semiconductors, 1980, Vol.14, №4, p.749-753.
  43. Temperature-electrical instability and low-frequency oscillation in monocrystals in GaSe. Physics and technics of semiconductors, 1980, Vol.14, №4, p.754,
  44. Photoconductivity of monocrystals n-CuInSe2. Physics and technics of semiconductors, 1980, Vol.14, №5, p.892-896.
  45. Induced by intrinsic light of impurity photoconductivity in monocrystals of indium selenide with residual photoconductivity properties. Physics and technics of semiconductors, 1981, Vol.15, №7, p. 1255-1258.
  46. Long-relaxation conductance, exited by electrical field in monocrystals of gallium and indium selenides. Physics and technics of semiconductors,1981, Vol.15, №1, p.113-119.
  47. Heating of carries in monocrystals CuInSe2 by HF electrical field. Physics and technics of semiconductors, 1981, Vol.15, №2, p.258-262.
  48. Induced injective impurity switching in monocrystals GaSe and low-frequencies oscillations of current. Physics and technics of semiconductors, 1981, Vol.15, №3, p.453-458.
  49. Electrical and photoelectrical properties of heterojunction p-GaSe and n-CuInSe. Physics and technics of semiconductors, 1981, Vol.15, №3, p.605.
  50. Dependence of electrical conductance of monocrystals of solid solutions p-CdхHg1-хTe on the intensity of the HF electrical field. Physics and technics of semiconductors, 1981, Vol.15,  №5, p.897-901.
  51. Effect of electron irradiation on the heating of carries by electrical field in monocrystals Ge1-xSix. Physics and technics of semiconductors, 1981, Vol.15, №10, p.1989-1993.
  52. Edge of absorption in monocrystals CuInSe2. Physics and technics of semiconductors, 1981, Vol.15, №11, p.2245-2247.
  53. Electrical and photoelectrical properties of heterojunction n-InSe/n-CuInSe2. Physics and technics of semiconductors, 1982, Vol.16, №2, p.353-355.
  54. Electroinduced impurity photoconductivity in monocrystals InSe with stimulated by electrical field negative photoconductivity and residual conductivity. Physics and technics of semiconductors,1982, Vol.16, №5, p.769-772.
  55. Effect of magnetic field on the photoconductivity of solid solutions p-CdxHg1-xTe. Physics and technics of semiconductors, 1982, Vol.16, №5, p.880-882.
  56. Impurity photoconductivity in monocrystals gallium selenide induced by electrical field. Physics and technics of semiconductors,1982, Vol.16, №6, p.953-958.
  57. VAC of high-ohmic monocrystals of layered compounds А3В6. Physics and technics of semiconductors, 1982, Vol.16, №6, p.993-998.
  58. Residual optical quenching of intrinsic photoconductivity in monocrystals of indium selenide. Physics and technics of semiconductors, 1982, Vol.16, № 8, p.1523.
  59. Long-relaxation negative photoconductivity in monocrystals of indium selenide. Physics and technics of semiconductors,  1982, Vol.16, № 8, p.1525.
  60. Thermoemf of hot carriers produced by HF electrical field in monocrystals Ge1-xSix irradiated by electrons. Physics and technics of semiconductors, 1982, Vol.16, №10, с.1828-1830.
  61. Photoelectrical fatiguability in monocrystals of InSe. Physics and technics of semiconductors, 1983, Vol.17, №4, p.761.
  62. About the effect of fluctuation of composition on the photoelectrical properties of monocrystals of solid solutions CdxHg1-xTe. Physics and technics of semiconductors, 1984, Vol.18, №6, p.1085-1086.
  63. Effect of gadolinium impurities on injection-induced impurity photoconductivity in InSe single crystals. Phys. Stat. Sol. (a), 1985. Vol. 92, p.k77-80.
  64. Effect of doping on the optical quenching of injection current in monocrystals InSe. Physics and technics of semiconductors, 1986, Vol.20, №7, p.1347.
  65. Effect of in homogeneity of composition on the electrical and optical properties of monocrystals CdxHg1-xTe (0.19<х<0.30). Inorganic materials, 1987, Vol.23, №11, p. 1835-1838.
  66. The influence of gadolinium doping on the switching effect in indium selenide single crystals. Phys. Stat. Sol. (a), 1989. vol. 116, p.k173-177.
  67. Effect of doping on exciton states in InSe and GaSe lamellar semiconductors. Phys. Stat. Sol. (a), 1991, vol. 128, p.235-242.
  68. Electrophysical characteristics of g-radiated monocrystals  in 0.24<x<0.40. Inorganic materials, 1991, Vol.27, №.4, p.696-698.
  69. Exitonic levels in doped monocrystals InSe and GaSe. Physics and technics of semiconductors, 1991, Vol.25, №6, p.983-989,
  70. «Transition» relaxation of dark current in pure and doped crystals of indium selenide. Inorganic materials, 1994, Vol.30, № 3, p.339-341.
  71. Impurity photoeffect in crystals InSe, doped by Dy. Inorganic materials, 1994, Vol.30, № 7, p.883-886.
  72. Accumulation of low light signals and spectral memory in monocrystals InSe:Dy. Inorganic materials, 1995, Vol.31, № 7, p.896-898.
  73. Long izotermal relaxation of dark electroconductance in monocrystals in indium selenide, doped by Dy. Inorganic materials, 1995, Vol.31, № 8, p.1020-1022.
  74. About the oscillation of conductivity in monocrystals InSe<Dy>. Inorganic materials, 1996, Vol.32, № 12, p.1446-1448.
  75. Intrinsic defects and impurity of dysprosium in monocrystals GaSe. Inorganic materials,1998, Vol.34, № 3, p.271-273.
  76. Effect of doping by Dy on the photoelectrical properties of monocrystals GaSe. Inorganic materials. 1999, Vol.35, № 4, p.410-412,
  77. Photoconductivity of films Cd1-xZnxSe in IR region deposited from solution. Russian J. of App. Physics, 2000, Vol.7, №6, p.56-61.
  78. Photoreceivers of IR radiation on the basis of CdS1-xSex deposited from solution. Russian J. of App. Physics, 2000, Vol.7, №6, p.63-68
  79. IR photoconductivity in InSe layered crystals sensitized by electrical field, Proc. SPIE, 2002, v5126, p.381-385
  80. Photoelectric properties of films A2B2C6, deposited from a solution, Proc. оf SPIE. 2004. Vol. 5834. p.254-259.
  81. Photoelectric properties of isotype heterocundoctions n-InSe<REE> in visible and near IR-region, Proceedings of SPIE. 2004. V.5834. p. 260-263.
  82. The effect of doping by rare earth elements on initial and sensibilized IR-photosen­sivity of layered Indium selenide crystals, Proceedings of SPIE. 2004. V.5834. p. 299-303.
  83. Photoluminescence of monocrystals InSe and GaSe, doped by rare-earth elements. Inorganic materials, 2004, Vol.40, № 6, p.660-662.
  84. Negative infrared photoconductivity in CdS1-xSex films, Russian J. of Applied Physics, 2004, №3 p.94-97.
  85. Functional opportunities of films Cd1-xZnxSe, deposited from aqueous solution in IR range of spectrum, Russian J. of Applied Physics, 2004, № 4, p.84-89.
  86. About the mechanism of doping by rare-earth elements on photoluminescence of single crystals of А3В6 with layered structure. Russian J. of Applied Physics, 2004, №5. p.74-78
  87. Sensitization of IR photoconductivity in layered crystals of InSe by electrical field. Russian J. of Applied Physics, 2004, № 5, p.81-85.
  88. Photosensitivity of p, n-Si/n-Cd1-xZnxS heterojunctions manufactured by a method of electrochemical deposition. Thin Solid Films, 2005, V.480-481, p.388-391.
  89. Photodetectors for visible and near infrared with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements, Proc. Of SPIE. 2006, Vol. 6636. p-66360G-1-66360G-4
  90. Effect of doping by RE on the electrical properties of single crystals InSe. Inorganic materials, 2006, Vol.42, № 9, p.1035-1039.
  91. Investigation of electrodeposited p-Si/Cd1-xZnxS1-ySey heterojunction solar cells. Thin Solid Films 2006, v.511-512, p.140-142.
  92. On the opportunity of increase of stability degree of parameters and characteristics of IR photoreceivers on the basis of Mo/CdS1-xSex, Russian J. of Applied Physics, 2006, № 5, p.82-86.
  93. Electrical and Photoelectric Properties of Electrochemically Fabricated SnO2/Cd0.4Zn0.6S/CdTe Solar Cells, Physics and technics of semiconductors, 2006, Vol.40, № 12, p.1476-1478.
  94. Russian J. of Applied Physics, 2006, № 2, p.62-66.
  95. Photoelectrical properties of isotypic heterostructures n-InSe<Dy>/n-CuInSe2 in visible and near IR regions of spectrum. Russian J. of Apple Physics, 2007, № 1, p.107-110.
  96. Recombination processes in films CdSeTe, deposited from solution. Inorganic Materials, 2007, Vol.43, № 3, p.281-283.
  97. Heat treatment effects in In2O3/Cd0.4Zn0.6S0.9Se0.1/CdTe  heterojunction solar cells. Journal of Optoelectronics and Advanced Materials, 2007, v.1, № 9, р.480-483
  98. Investigation of electrodeposited glass/SnO2/CuInSe2/Cd1-xZnxS1-ySey/ZnO thin solar cells. Japanese journal of Applied Physics, 2007, v.46, № 11, p.7359-7361.
  99. Functional capabilities of CdSe1-xTex films in IR region of the spectrum, Russian Applied Physics, 2008, № 5, p103-106.
  100. Conductivity of doped and pure high ohmic GaSe crystals, Inorganic Materials, 2009, v45, № 7, p785-789
  101. Dielectric properties of nanokomposites on the bases on Copper Sulfide Nanoparticles and polymer matrix, Electronic processing of materials, 2004, , p.105-108
  102. Dependence of carrier mobility in gallium monoselenide crystals on the electric field, Semiconductors, 2012, v46, N.6, p.751-755.
  103. Temperature dependence of carier mobility in pure and doped by gadolinium p-GaSe crystals, Inorganic materials, 2012, v.48, N.6, p.649-653.
  104. Effect of temperature and doping by RE elements on the carrier mobility in indium monoselenides, Semiconductors, 2013 , v 47, N 8 , p 1009 – 1013
  105. Effect of electric field on conductivity of  InSe and InSe(Dy) crystals, Inorganic Materials, 2013 , v49 , № 12 , p1277 - 1284

BOOKS

2004       «Solid State Electronics» (in Azerbaijan) school-book for institutes of higher education, Baku, Tahsil

2005         «Optoelectronics» (in Azerbaijan) textbook for institutes of higher education, Baku, Maarif.

2008         “Story and methodology of physical electronics” (in Azerbaijan) textbook for institutes of higher education, Baku, Tahsil

2009         “Materials of electronic technique  and basis nanotechnology” (in Azerbaijan) textbook for institutes of higher education, Baku, Tahsil

2011         “Electronic devises and basis of electronic emmision” (in Azerbaijan) textbook for institutes of higher education, Baku, Tahsil

educational-methodical works

  1. Bachelor program booklet on the specialty of “Physical electronics”, 2007, Baku, Tahsil

34 proqram

  1. Master program booklet on the specialty of “Physical electronics”, 2007, Baku, Tahsil

25 proqram

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